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Aktive Komponenten

SiC Dioden

Bild Serie/Typ Hersteller Produktgruppe Artikelkategorie Hauptkategorie Gehäusetyp Nennspannung[Vdc] Nennstrom [A] Nennstrom [mA] Produkt Feature Produkt Status
SemiQ GP3D006A065A GP3D006A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 6 0,006
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 29mJ • All parts tested to greater than 715V
 in production
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No Image GP3D006A065D SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-263 650 6 0,006
in production
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SemiQ GP3D008A065A GP3D008A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 8 0,008
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V
 in production
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SemiQ GP3D008A065D GP3D008A065D SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-263 650 8 0,008
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ • All parts tested to greater than 715V
 in production
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SemiQ GP3D010A065A GP3D010A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
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SemiQ GP3D010A065B GP3D010A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
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SemiQ GP3D010A065D GP3D010A065D SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-263 650 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
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SemiQ GP3D012A065A GP3D012A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 12 0,012
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ • All parts tested to greater than 715V
 in production
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SemiQ GP3D012A065B GP3D012A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 12 0,012
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ
 in production
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SemiQ GP3D020A065A GP3D020A065A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 650 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
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SemiQ GP3D020A065B GP3D020A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
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SemiQ GP3D030A065B GP3D030A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 30 0,03
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ
 in production
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SemiQ GP3D050A065B GP3D050A065B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 650 50 0,05
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 333mJ • All parts tested to greater than 715V
 in production
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SemiQ GP3D020A065U GP3D020A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 67mJ • All parts tested to greater than 715V
 in production
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SemiQ GP3D024A065U GP3D024A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 24 0,024
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 80mJ per leg
 in production
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SemiQ GP3D040A065U GP3D040A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 40 0,04
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 135mJ • All parts tested to greater than 715V
 in production
Anfragen
SemiQ GP3D010A120A GP3D010A120A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1200 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V
 in production
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SemiQ GP3D010A120B GP3D010A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ • All parts tested to greater than 1400V
 in production
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SemiQ GP3D015A120A GP3D015A120A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1200 15 0,015
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V
 in production
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SemiQ GP3D015A120B GP3D015A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 15 0,015
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D020A120A GP3D020A120A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1200 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D020A120B GP3D020A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D030A120B GP3D030A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 30 0,03
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ • All parts tested to greater than 1400V
 in production
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No Image GP3D040A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 40 0,04
in production
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SemiQ GP3D050A120B GP3D050A120B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1200 50 0,05
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 666mJ • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D020A120U GP3D020A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 125mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D030A120U GP3D030A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 30 0,03
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 200mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D040A120U GP3D040A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 40 0,04
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 275mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D060A120U GP3D060A120U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 1200 60 0,06
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 400mJ per leg • All parts tested to greater than 1400V
 in production
Anfragen
SemiQ GP3D005A170B GP3D005A170B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1700 5 0,005
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 145mJ
 in production
Anfragen
SemiQ GP3D010A170B GP3D010A170B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1700 10 0,01
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 350mJ • All parts tested to greater than 1870V • High forward surge current
 in production
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No Image GP3D020A170A SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220-2L 1700 20 0,02
in production
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SemiQ GP3D020A170B GP3D020A170B SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-2L 1700 20 0,02
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 600mJ • All parts tested to greater than 1870V
 in production
Anfragen
SemiQ GP3D016A065U GP3D016A065U SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-247-3L 650 16 0,016
• Unipolar rectifier with surge current • Zero reverse recovery current • Fast, temperature-independent switching • Avalanche tested to 38mJ per leg • All parts tested to greater than 715V
 in production
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No Image GP3D006A065F SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220FP-2L 650 6 0,006
in production
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No Image GP3D008A065F SemiQ SiC Diskret SiC Dioden Aktive Komponenten TO-220FP-2L 650 8 0,008
in production
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